Single Electron Spin Measurements in Submicron Si MOS-FETs Random Telegraph Signal, Single Electron Spin Resonance

by Ming Xiao

Presented is our measurements of a single electronic spin in the gate oxide of submicron-size silicon field effect transistors. Defects near the silicon and silicon dioxide interface have profound... This description may be from another edition of this product.

• Format: Paperback
• Language: English
• ISBN: 3836493756
• ISBN13: 9783836493758
• Release Date: December 2008
• Publisher: VDM Verlag
• Length: 124 Pages
• Weight: 0.39 lbs.
• Dimensions: 0.3" x 6.0" x 9.0"