Nitride Wide Bandgap Semiconductor Material and Electronic Devices

By Yue Hao and Jin Feng Zhang

Book Overview

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

• Format: Paperback
• Language: English
• ISBN: 0367574365
• ISBN13: 9780367574369
• Release Date: June 2020
• Publisher: CRC Press
• Length: 392 Pages
• Weight: 1.50 lbs.
• Dimensions: 0.8" x 7.0" x 10.0"